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SS8050(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
Features
Power dissipation
PCM : 1 W (TA=25)
: 2 W (TC=25)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1.5 A
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 A
Emitter cut-off current ICEO VCE=20V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
hFE(1) VCE=1V, IC=100mA 85 400
DC current gain
hFE(2) VCE=1V, IC=800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V
Base-emitter voltage VBE VCE=1V, IC=10mA 1 V
Transition frequency fT VCE=10V, IC=50mA,f=30MHZ 100 MHz
CLASSIFICATION OF hFE(1)
Rank B C D D3
Range 85-160 120-200 160-300 300-400
SS8050(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
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