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                                                                                                   SS8050
                                                                                           SOT-23 Transistor(NPN)

                                                                                                        SOT-23
                                           1. BASE
                                           2. EMITTER
                                           3. COLLECTOR




Features
Complimentary to SS8550



MARKING: Y1

MAXIMUM RATINGS (TA=25 unless otherwise noted)                                        Dimensions in inches and (millimeters)


         Symbol                                 Parameter                                      Value                   Units
  VCBO              Collector-Base Voltage                                                         40                       V
  VCEO              Collector-Emitter Voltage                                                      25                       V
  VEBO              Emitter-Base Voltage                                                           5                        V
  IC                Collector Current -Continuous                                                 1.5                       A
  PC                Collector Power Dissipation                                                   0.3                       W
  Tj                Junction Temperature                                                          150                       
  Tstg              Storage Temperature                                                       -55-150                       

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                              Symbol        Test    conditions        MIN          TYP      MAX          UNIT

  Collector-base breakdown voltage                   V(BR)CBO    IC= 100A, IE=0               40                                 V

  Collector-emitter breakdown voltage                V(BR)CEO    IC= 0.1mA, IB=0              25                                 V

  Emitter-base breakdown voltage                     V(BR)EBO    IE=100A, IC=0                5                                  V

  Collector cut-off current                             ICBO     VCB=40V, IE=0                                        0.1       A

  Collector cut-off current                             ICEO     VCB=20V, IE=0                                        0.1       A

  Emitter cut-off current                               IEBO     VEB= 5V, IC=0                                        0.1       A

                                                        hFE(1)   VCE=1V, IC= 100mA           120                      400
  DC current gain
                                                        hFE(2)   VCE=1V, IC= 800mA            40

  Collector-emitter saturation voltage               VCE(sat)    IC=800mA, IB= 80mA                                   0.5        V

  Base-emitter saturation voltage                    VBE(sat)    IC=800mA, IB= 80mA                                   1.2        V

                                                                 VCE=10V, IC= 50mA
  Transition frequency                                    fT                                 100                                MHz
                                                                 f=30MHz

CLASSIFICATION OF hFE(1)
  Rank                                     L                                     H                                J
  Range                               120-200                              200-350                              300-400
    SS8050
SOT-23 Transistor(NPN)

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