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                                                                                                 TIP110
                                                                                     TO-220 Darlington Transistor (NPN)

                                                                                                       TO-220
                                                1. BASE

                                                2. COLLECTOR

                                                3. EMITTER
                                        3
                                    2
                                1
Features
        High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
        Low Collector-Emitter Saturation Voltage
        Industrial Use
MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                   Parameter                         Value        Units
 VCBO        Collector-Base Voltage                          60             V        Dimensions in inches and (millimeters)

 VCEO        Collector-Emitter Voltage                       60             V
 VEBO        Emitter-Base Voltage                            5              V
 IC          Collector Current -Continuous                   2              A
 PC          Collector Power Dissipation                     2              W
 TJ          Junction Temperature                           150             
 Tstg        Storage Temperature                       -55 to +150          

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
            Parameter                        Symbol              Test   conditions               MIN      TYP    MAX     UNIT

Collector-base breakdown voltage             V(BR)CBO        IC=10mA,IE=0                         60                          V

                                                    (sus)
Collector-emitter sustaining   voltage       VCEO            IC=30mA,IB=0                         60                          V

Emitter-base breakdown voltage               V(BR)EBO        IE=10mA,IC=0                          5                          V

Collector cut-off current                      ICEO          VCE=30V,IB=0                                          2      mA

Collector cut-off current                      ICBO          VCB=60V,IE=0                                          1      mA

Emitter cut-off current                        IEBO          VEB=5V,IC=0                                           2      mA

                                              hFE(1)         VCE=4V,IC=1A                        1000
DC current gain
                                              hFE(2)         VCE=4V,IC=2A                        500

Collector-emitter saturation voltage         VCE(sat)        IC=2A,IB=8mA                                         2.5         V

Base-emitter voltage                           VBE           VCE=4V,IC=2A                                         2.8         V

Collector output capacitance                   Cob           VCB=10V,IE=0,f=0.1MHz                                100         pF
                                    TIP110
                          TO-220 Darlington Transistor (NPN)

Typical Characteristics

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