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                                                                                                      TIP112
                                                                                          TO-220 Darlington Transistor (NPN)


                                                                                                            TO-220
                                                         1. BASE

                                                         2. COLLECTOR

                                                         3. EMITTER
                                            3
                                        2
                                    1
Features
        High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
        Low Collector-Emitter Saturation Voltage
        Industrial Use
MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                   Parameter                         Value           Units
                                                                                          Dimensions in inches and (millimeters)
 VCBO        Collector-Base Voltage                          100              V
 VCEO        Collector-Emitter Voltage                       100              V
 VEBO        Emitter-Base Voltage                             5               V
 IC          Collector Current -Continuous                    2               A
 PC          Collector Power Dissipation                      2               W
 TJ          Junction Temperature                            150              
 Tstg        Storage Temperature                          -55 to +150         

ELECTRICAL CHARACTERISTICS (Tamb=25                                      unless       otherwise   specified)

           Parameter                            Symbol            Test     conditions                  MIN     TYP     MAX     UNIT

Collector-base breakdown voltage                V(BR)CBO      IC=10mA,IE=0                             100                         V

                                                                              (SUS)
Collector-emitter breakdown voltage             V(BR)CEO      IC=30mA,IB=0                             100                         V

Emitter-base breakdown voltage                  V(BR)EBO      IE=10mA,IC=0                              5                          V

Collector cut-off current                         ICEO        VCE=50V,IB=0                                              2          mA

Collector cut-off current                         ICBO        VCB=100V,IE=0                                             1          mA

Emitter cut-off current                           IEBO        VEB=5V,IC=0                                               2          mA

                                                 hFE(1)       VCE=4V,IC=1A                            1000
DC current gain
                                                 hFE(2)       VCE=4V,IC=2A                             500

Collector-emitter saturation voltage            VCE(sat)      IC=2A,IB=8mA                                              2.5        V

Base-emitter voltage                              VBE         VCE=4V,IC=2A                                              2.8        V

Collector output capacitance                      Cob         VCB=10V,IE=0,f=0.1MHz                                    100         pF
                                    TIP112
                          TO-220 Darlington Transistor (NPN)


Typical Characteristics

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