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                                                                                                    2N3904(NPN)
                                                                                                 TO-92 Bipolar Transistors


                                                                  1. EMITTER                               TO-92
                                                                  2. BASE

                                                                  3. COLLECTOR



Features
   NPN silicon epitaxial planar transistor for switching and
   Amplifier applications
   As complementary type, the PNP transistor 2N3906 is
   Recommended
   This transistor is also available in the SOT-23 case with
   the type designation MMBT3904


MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                  Parameter                      Value          Units
  VCBO       Collector-Base Voltage                        60               V                Dimensions in inches and (millimeters)
  VCEO       Collector-Emitter Voltage                     40               V
  VEBO       Emitter-Base Voltage                          6                V
    IC       Collector Current -Continuous                 0.2              A
   PC        Collector Power Dissipation                0.625               W
   TJ        Junction Temperature                          150              
   Tstg      Storage Temperature                        -55-150             

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                        Symbol                Test         conditions         MIN        TYP       MAX    UNIT
Collector-base breakdown voltage             V(BR)CBO            IC=10A, IE=0                        60                          V
Collector-emitter breakdown voltage          V(BR)CEO            IC= 1mA , IB=0                      40                          V
Emitter-base breakdown voltage               V(BR)EBO            IE= 10A, IC=0                        6                          V
Collector cut-off    current                     ICBO            VCB=60V, IE=0                                          0.1     A
Collector cut-off    current                     ICEO            VCE= 40V, IB=0                                         0.1     A
Emitter cut-off     current                      IEBO            VEB= 5V, IC=0                                          0.1     A
                                                 hFE1            VCE=1V,        IC=10mA              100                400
DC current gain                                  hFE2            VCE=1V,        IC=50mA              60
                                                 hFE3            VCE=1V,        IC=100mA             30
Collector-emitter saturation voltage            VCE(sat)         IC=50mA, IB=5mA                                        0.3      V
Base-emitter saturation voltage                 VBE(sat)         IC=50mA, IB=5mA                                        0.95     V

Transition frequency                               fT            VCE=20V,IC=10mA,f=100MHz            300                       MHZ

Delay Time                                         td            VCC=3V,VBE=0.5V,                                       35      ns
Rise Time                                          tr            IC=10mA,IB1=1mA                                        35      ns
Storage Time                                       ts            VCC=3V, IC=10mA                                        200     ns
Fall Time                                          tf            IB1=IB2=1mA                                            50      ns
CLASSIFICATION          OF     hFE1
 Rank                                    O                                            Y                             G
 Range                                100-200                                      200-300                      300-400
                           2N3904(NPN)
                          TO-92 Bipolar Transistors


Typical Characteristics

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