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                                                                                            2N3906(PNP)
                                                                                          TO-92 Bipolar Transistors


                                                                  1. EMITTER
                                                                                                      TO-92
                                                                  2. BASE

                                                                  3. COLLECTOR



Features
       PNP silicon epitaxial planar transistor for switching and
       Amplifier applications
       As complementary type, the NPN transistor 2N3904 is
       Recommended
       This transistor is also available in the SOT-23 case with
       the type designation MMBT3906

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol                 Parameter                  Value     Units
VCBO         Collector-Base Voltage                -40        V
VCEO         Collector-Emitter Voltage             -40        V
VEBO         Emitter-Base Voltage                   -5        V                       Dimensions in inches and (millimeters)
IC           Collector Current -Continuous         -0.2       A
PC           Collector Power Dissipation          0.625      W
TJ           Junction Temperature                  150       
Tstg         Storage Temperature                 -55-150     

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                          Symbol       Test      conditions         MIN     TYP      MAX      UNIT
Collector-base breakdown voltage                V(BR)CBO   IC = -10A, IE=0                -40                        V
Collector-emitter breakdown voltage             V(BR)CEO   IC =-1mA , IB=0                -40                        V
Emitter-base breakdown voltage                  V(BR)EBO   IE= -10A, IC=0                  -5                        V
Collector cut-off    current                      ICBO     VCB= -40 V,IE=0                                  -0.1    A
Collector cut-off    current                      ICEX     VCE= -30 V,VBE(off)=-3V                          -50     nA
Emitter cut-off     current                       IEBO     VEB= -5 V ,       IC=0                           -0.1    A
                                                 hFE1      VCE=-1 V,     IC= -10mA        100               400
DC current gain                                  hFE2      VCE=-1 V,     IC= -50mA         60
                                                 hFE3      VCE=-1 V,     IC= -100mA        30
Collector-emitter saturation voltage            VCE(sat)   IC= -50mA, IB= -5mA                              -0.4      V
Base-emitter saturation voltage                 VBE(sat)   IC= -50mA, IB= -5mA                             -0.95      V
                                                           VCE=-20V, IC= -10mA
Transition frequency                               fT                                     250                       MHz
                                                           f = 100MHz
Delay Time                                         td      VCC=-3V,VBE=-0.5V,                               35        ns
Rise Time                                          tr      IC=-10mA,IB1=-1mA                                35        ns
Storage Time                                       ts      VCC=-3V,Ic=-10mA                                 225       ns
Fall Time                                          tf      IB1=IB2=-1mA                                     75        ns


CLASSIFICATION OF hFE1
 Rank                                      O                                   Y                           G
 Range                                100-200                               200-300                      300-400
                           2N3906(PNP)
                          TO-92 Bipolar Transistors

Typical Characteristics

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