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                                                                                                 2N5400(PNP)
                                                                                            TO-92 Bipolar Transistors

                                                                                                       TO-92
                                                                1.    EMITTER

                                                                2.    BASE

                                                                3. COLLECTOR




Features

      Switching and amplification in high voltage
      Applications such as telephony
      Low current(max. 600mA)
      High voltage(max.130v)


MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                        Dimensions in inches and (millimeters)
 Symbol               Parameter                     Value            Units
 VCBO       Collector-Base Voltage                  -130              V
 VCEO       Collector-Emitter Voltage               -120              V
 VEBO       Emitter-Base Voltage                     -5               V
 IC         Collector Current -Continuous            -0.6             A
 PC         Collector Power Dissipation             0.625             W
 Tj         Junction Temperature                     150              
 Tstg       Storage Temperature                 -55-150               

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                       Symbol            Test        conditions       MIN      TYP      MAX     UNIT

 Collector-base breakdown voltage           V(BR)CBO        IC=-100A, IE=0                 -130                         V
 Collector-emitter breakdown voltage        V(BR)CEO        IC=-1mA, IB=0                  -120                         V
 Emitter-base breakdown voltage             V(BR)EBO        IE= -10A, IC=0                  -5                          V
 Collector cut-off current                    ICBO          VCB= -100 V,       IE=0                           -0.1     A
 Emitter cut-off current                      IEBO          VEB= -3 V, IC=0                                   -0.1     A
                                             hFE1           VCE= -5 V,        IC=-1mA       30
 DC current gain                             hFE2           VCE= -5 V, IC= -10mA            40                180
                                             hFE3           VCE= -5 V,       IC=-50mA       40
                                            VCE(sat)        IC= -10mA, IB= -1mA                               -0.2      V
 Collector-emitter saturation voltage
                                            VCE(sat)        IC= -50mA, IB= -5mA                               -0.5      V
                                            VBE(sat)        IC= -10mA, IB= -1mA                                -1       V
 Base-emitter saturation voltage
                                            VBE(sat)        IC= -50mA, IB= -5mA                                -1       V
                                                            VCE=-10V,        IC=-10mA
 Transition frequency                          fT                                          100                       MHz
                                                            f =30MHz
 Collector output capacitance                 Cob           VCB=-10V,IE=0,f=1MHz                               6        pF
                           2N5400(PNP)
                          TO-92 Bipolar Transistors


Typical Characteristics

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