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                                                                                           2N5550(NPN)
                                                                                         TO-92 Bipolar Transistors

                                                                                                     TO-92
                                                                     1. EMITTER

                                                                     2. BASE

                                                                     3. COLLECTOR



Features
        Switching and amplification in high voltage
        Applications such as telephony
        Low current(max. 600mA)
        High voltage(max.160V)


 MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol               Parameter                     Value        Units
 VCBO       Collector-Base Voltage                    160            V                Dimensions in inches and (millimeters)
 VCEO       Collector-Emitter Voltage                 140            V
 VEBO       Emitter-Base Voltage                       6             V
 IC         Collector Current -Continuous             0.6            A
 PC         Collector Power Dissipation             0.625            W
 Tj         Junction Temperature                      150            
 Tstg       Storage Temperature                 -55-150              

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                       Symbol            Test       conditions            MIN     TYP      MAX     UNIT

 Collector-base breakdown voltage           V(BR)CBO        IC=100A,IE=0                       160                        V
 Collector-emitter           breakdown
                                            V(BR)CEO        IC=1mA, IB=0                       140                        V
 voltage
 Emitter-base breakdown voltage             V(BR)EBO        IE=10A, IC=0                        6                         V

 Collector cut-off current                    ICBO          VCB=100V,IE=0                                       0.1      A
 Emitter cut-off current                      IEBO          VEB=4V, IC=0                                        0.05     A
                                             hFE(1)         VCE=5V,IC=1mA                      60

 DC current gain                             hFE(2)         VCE=5V,IC =10mA                    60               250

                                             hFE(3)         VCE=5V,IC=50mA                     20
                                                            IC= 10mA, IB=1mA                                    0.15
 Collector-emitter saturation voltage        VCEsat                                                                       V
                                                            IC= 50mA, IB=5mA                                    0.25
                                                            IC= 10mA, IB=1mA                                      1
 Base-emitter saturation voltage             VBEsat                                                                       V
                                                            IC= 50mA, IB=5 mA                                    1.2
 Transition frequency                          fT           VCE=10V,IC=10mA,,f=100MHz          100              300     MHz

 Collector output capacitance                 Cob           VCB=10V,IE=0,f=1MHz                                  6       pF
                                                            VCE=5V,Ic=0.25mA,
 Noise figure                                 NF                                                                 10      dB
                                                            f=1KHZ,Rs=1k
                           2N5550(NPN)
                          TO-92 Bipolar Transistors


Typical Characteristics

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