Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors LGE 2n5551

<< Back | Home

Most service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.



Image preview - the first page of the document



>> Download 2n5551 documenatation <<

Text preview - extract from the document

                                                                                                 2N5551(NPN)
                                                                                              TO-92 Bipolar Transistors

                                                                                                          TO-92
                                                                     1.    EMITTER

                                                                     2.    BASE

                                                                     3. COLLECTOR




Features
         Switching and amplification in high voltage
         Applications such as telephony
         Low current(max. 600mA)
         High voltage(max.180V)

MAXIMUM RATINGS (TA=25 unless otherwise noted)                                               Dimensions in inches and (millimeters)

  Symbol                   Parameter                        Value                    Units
  VCBO           Collector-Base Voltage                      180                      V
  VCEO           Collector-Emitter Voltage                   160                      V
  VEBO           Emitter-Base Voltage                         6                       V
  IC             Collector Current -Continuous               0.6                      A
  PC             Collector Power Dissipation                0.625                     W
  Tj             Junction Temperature                        150                      
  Tstg           Storage Temperature                       -55-150                    

ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)

              Parameter                        Symbol        Test    conditions                 MIN     TYP      MAX     UNIT

  Collector-base breakdown voltage             V(BR)CBO    IC=100A,IE=0                         180                        V
  Collector-emitter      breakdown
                                               V(BR)CEO*   IC= 1mA, IB=0                        160                        V
  voltage
  Emitter-base breakdown voltage               V(BR)EBO    IE= 10A, IC=0                         6                         V
  Collector cut-off current                      ICBO      VCB= 120V, IE=0                                        50      nA
  Emitter cut-off current                        IEBO      VEB= 4V, IC=0                                          50      nA
                                                hFE1*      VCE=5V, IC=1mA                       80
  DC current gain                               hFE2*      VCE=5V, IC =10mA                     80               250
                                                 hFE3      VCE=5V, IC=50mA                      30
                                                           IC=10mA, IB=1mA                                       0.15
  Collector-emitter saturation voltage          VCEsat*                                                                    V
                                                           IC=50mA, IB=5mA                                       0.2
                                                           IC=10mA, IB= 1mA                                       1
  Base-emitter saturation voltage               VBEsat*                                                                    V
                                                           IC=50mA, IB= 5mA                                       1
  Transition frequency                            fT       VCE=10V,IC=10mA,f=100MHz             100              300     MHz
  Collector output capacitance                   Cob       VCB=10V,IE=0,f=1MHz                                    6       pF
  Input capacitance                               Cib      VBE=0.5V,IC=0,f=1MHz                                   20      pF
                                                           VCE=5V,Ic=0.25mA,
  Noise figure                                   NF                                                               8       dB
                                                           f=10Hz to 15.7KHz,Rs=1k
*Pulse test
                           2N5551(NPN)
                          TO-92 Bipolar Transistors


Typical Characteristosc

◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo