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                                                                                            2N7002W
                                                                                           Mosfet(N-Channel)


                                                                                               SOT-323
                                                          1. GATE
                                                          2. SOURCE
                                                          3. DRAIN


Features
          High density cell design for low RDS(ON)
          Voltage controlled small signal switch
          Rugged and reliable
          High saturation current capability

Marking: K72

                                                                                   Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol              Parameter           Value          Units
VDS           Drain-Source voltage        60             V
ID            Drain Current               115            mA
PD            Power Dissipation           225           mW
TJ            Junction Temperature        150            
Tstg          Storage Temperature       -55-150          

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                 Parameter                 Symbol             Test    conditions      MIN      TYP      MAX      UNIT
                                                       VGS=0 V, ID=10 A               60
     Drain-Source Breakdown Voltage        V(BR)DSS
                                                       VGS=0 V, ID=3mA                60                           V
     Gate-Threshold Voltage                 Vth(GS)    VDS=VGS, ID=250 A               1                 2.5
     Gate-body Leakage                         lGSS    VDS=0 V, VGS=

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