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                                                                                     2SA1980(PNP)
                                                                                    TO-92 Bipolar Transistors

                                                                                                  TO-92
                                                                 1. EMITTER

                                                                 2. COLLECTOR

                                                                 3. BASE




Features
       Low collector saturation voltage: VCE(sat) =-0.3V(Max.)

       Low output capacitance : Cob =4pF (Typ.)

       Complementary pair with 2SC5343




                                                                                Dimensions in inches and (millimeters)

MAXIMUM RATINGS (TA=25 unless otherwise noted)
       Symbol                                   Parameter                                 Value                Units
VCBO                Collector-Base Voltage                                                 -50                   V
VCEO                Collector-Emitter Voltage                                              -50                   V
VEBO                Emitter-Base Voltage                                                    -5                   V
IC                  Collector Current -Continuous                                         -150                  mA
PC                  Collector Power Dissipation                                           625                   mW
Tj                  Junction Temperature                                                  150                    
Tstg                Storage Temperature                                                  -55-150                 
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
             Parameter                       Symbol       Test     conditions                    MIN   TYP       MAX     UNIT

 Collector-base breakdown voltage            V(BR)CBO   IC=-100A,IE=0                            -50                      V

 Collector-emitter breakdown voltage         V(BR)CEO   IC=-10mA,IB=0                            -50                      V

 Emitter-base breakdown voltage              V(BR)EBO   IE=-10A,IC=0                              -5                      V

 Collector cut-off current                      ICBO    VCB=-50V,IE=0                                            -0.1    A

 Collector cut-off current                      ICEO    VEB=-5V,IC=0                                             -0.1    A

 DC current gain                                hFE     VCE=-6V,IC=-2mA                           70             700

 Collector-emitter saturation voltage        VCE(sat)   IC=-100mA,IB=-10mA                                       -0.3     V

 Transition frequency                            fT     VCE=-10V,IC=-1mA                          80                     MHz

 Collector output capacitance                   Cob     VCB=-10V,IE=0,f=1MHz                              4         7    pF

 Noise figure                                   NF      VCE=-6V,IC=-0.1mA,f=1KHZ,RS=10K                             10   dB


CLASSIFICATION OF            hFE
 Rank                                   O                         Y                  G                          L
 Range                             70-140                    120-240              200-400                     300-700
                          2SA1980(PNP)
                          TO-92 Bipolar Transistors


Typical Characteristics

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