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                                                                                                 2SA1012(PNP)
                                                                                                   TO-220 Transistor


                                                    1. BASE                                                  TO-220
                                                    2. COLLECTOTR
                                                    3. EMITTER


                                                3
                                            2
Features                                1

       HIGH CURRENT SWITCHING APPLICATIONS.
       Low Collector Saturation Voltage
       : VCE(SAT) = - 0.4V(MAX) at IC= - 3A
       High Speed Swithing Time : tstg = 1.0us (Typ.)
       Complementary to 2SC2562
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol                     Parameter                   Value       Units
VCBO             Collector-Base Voltage                 -60          V
                                                                                           Dimensions in inches and (millimeters)
VCEO             Collector-Emitter Voltage              -50          V
VEBO             Emitter-Base Voltage                    -5          V
IC               Collector Current -Continuous           -5          A
PC               Collector Power Dissipation                 2      W
Tj               Junction Temperature                   150         
Tstg             Storage Temperature Range           -55-150        

ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
                 Parameter                          Symbol         Test    conditions     MIN     TYP        MAX      UNIT
     Collector-base breakdown voltage               V(BR)CBO     IC =-1mA, IE=0           -60                          V
     Collector-emitter breakdown voltage            V(BR)CEO     IC =-1mA, IB=0           -50                          V
     Emitter-base breakdown voltage                 V(BR)EBO     IE=-100A, IC=0           -5                           V
     Collector cut-off current                        ICBO       VCB=-50V, IE=0                               -1      A
     Emitter cut-off current                          IEBO       VEB=-5V, IC=0                                -1      A
     DC current gain                                 hFE(1)      VCE=-1V, IC=-1A          70                 240
                                                     hFE(2) *    VCE=-1V, IC=-3A          30
     Collector-emitter saturation voltage           VCE(sat) *   IC=-3A, IB=150mA                 -0.2       -0.4      V
     Base-emitter saturation voltage                VBE(SAT)     IC=-3A, IB=150mA                 -0.9       -1.2      V
     Transition frequency                               fT       VCE=-4V, IC=-1A                   60                 MHz
     Collector output capacitance                     Cob        VCB=-10V, IE=0, f=1MHz           170                 pF
                            Turn-on Time               ton                                         0.1
     Switching                                                   VCC=-30V,IC=-3A,
                            Storage Time               tstg                                        1.0                 us
     time                                                        IB1=-IB2=-0.15A
                            Fall Time                   tf                                         0.1
       *Pulse test: tp300S, 0.02.
CLASSIFICATION OF                hFE
 Rank                                                    O                                               Y
 Range                                               70-140                                        120-240
                          2SA1012(PNP)
                           TO-220 Transistor


Typical Characteristics
2SA1012(PNP)
 TO-220 Transistor

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