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2SA1013
TO-92MOD Transistor (PNP)
TO-92MOD
5.800
1. EMITTER 6.200
1
2
3 2. COLLECTOR 8.400
8.800
3. BASE 0.900
1.100
0.400
Features
0.600
13.800
14.200
High voltage:VCEO=-160V
Large continuous collector current capability
1.500 TYP
Complementary to 2SC2383 2.900
3.100
0.000 1.600
0.380
0.400 4.700
0.500 5.100
1.730
4.000 2.030
MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -160 V
VCEO Collector-Emitter Voltage -160 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -1 A
PC Collector Power Dissipation 0.9 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=- 100A , IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -160 V
Emitter-base breakdown voltage V(BR)EBO IE= -10A, IC=0 -6 V
Collector cut-off current ICBO VCB=-150 V , IE=0 -1 A
Emitter cut-off current IEBO VEB=-6V, IC=0 -1 A
DC current gain hFE VCE=-5 V, IC=- 200mA 60 200
Collector-emitter saturation voltage VCE(sat) IC= -500m A, IB= -50mA -1.5 V
Base-emitter voltage VBE IC= -5mA, VCE=- 5V -0.45 -0.75 V
Transition frequency fT VCE= -5 V, IC= -200mA 15 MHz
Collector Output capacitance Cob VCB=-10V, IE=0,f=1MHz 35 pF
CLASSIFICATION OF hFE
Rank R O
Range 60-120 100-200
2SA1013
TO-92MOD Transistor (PNP)
Typical characteristics
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