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                                                                                                      2SA1048
                                                                                                 TO-92S Transistor (PNP)
                                                 1. EMITTER

                                                                                                          TO-92S
                                                 2. COLLECTOR


                                                 3. BASE
                             123

Features
       High voltage: VCEO=-50V(Min.)
       High hFE: hFE=70~400
       Low noise: NF=1dB(Typ.),10dB(Max.)
       Complementary to 2SC2458


MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                    Parameter                        Value     Units
VCBO         Collector- Base Voltage                         -50        V
VCEO         Collector-Emitter Voltage                       -50        V
VEBO         Emitter-Base Voltage                            -5         V                    Dimensions in inches and (millimeters)

IC           Collector Current -Continuous                  -0.15       A
PC           Collector Power Dissipation                     0.2        W
TJ           Junction Temperature                           150         
Tstg         Storage Temperature                          -55-150       


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                            Symbol              Test       conditions             MIN     TYP     MAX     UNIT
 Collector-base breakdown voltage                V(BR)CBO     IC=-100 A, IE=0                          -50                       V
 Collector-emitter breakdown voltage             V(BR)CEO     IC=-1mA, IB=0                            -50                       V
 Emitter-base breakdown voltage                  V(BR)EBO     IE=-100 A, IC=0                           -5                       V
 Collector cut-off current                         ICBO       VCB=-50 V, IE=0                                           -0.1     A
 Emitter cut-off current                           IEBO       VEB=-5 V, IC=0                                            -0.1     A
 DC current gain                                   hFE        VCE=-6 V, IC=-2mA                         70              400
 Collector-emitter saturation voltage            VCE(sat)     IC=-100mA, IB=-10mA                                       -0.3     V
 Transition frequency                               fT        VCE=-10 V, IC=-1mA                        80                      MHz
 Collector output capacitance                      Cob        VCB=-10 V, IE=0, f=1 MHz                                    7      pF
                                                              VCE=-6 V, IC=-0.1 mA,
 Noise figure                                      NF                                                                     10     dB
                                                              f=1 KHZ, Rg=10 K


CLASSIFICATION OF            hFE
 Rank                                        O                                     Y                                 GR

 Range                                   70-140                                 120-240                           200-400
                              2SA1048
                          TO-92S Transistor (PNP)


Typical Characteristics

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