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2SA162
SOT-23-3L Transistor(PNP)
1. BASE
SOT-23-3L
2. EMITTER 2.92
3. COLLECTOR 0.35
1.17
Features
Low noise : NF= 1dB(Typ.),10dB (Max.) 2.80 1.60
Complementary to 2SC2712.
Small Package.
0.15
1.90
MARKING: SO , SY , SG
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Current -Continuous -150 mA
PD Collector Power Dissipation 150 mW
TJ Junction Temperature 125
Tstg Storage Temperature -55-125
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100u A,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-100 u A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 uA
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 uA
DC current gain hFE VCE=-6V,IC=-2mA 70 400
Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.3 V
Transition frequency fT VCE=-10V,IC=-1mA 80 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF
VCE=-6V,Ic=0.1mA,
Noise figure NF 10 dB
f=1KHz,Rg=10K
CLASSIFICATION OF hFE
Rank O Y GR(G)
Range 70-140 120-240 200-400
2SA162
SOT-23-3L Transistor(PNP)
Typical Characteristics
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