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2sa1179_sot-23


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                                                                                                 2SA1179
                                                                                            SOT-23 Transistor(PNP)


                                        1. BASE
                                                                                                    SOT-23
                                        2. EMITTER
                                        3. COLLECTOR


Features
        High breakdown voltage

MARKING: M

MAXIMUM RATINGS (TA=25 unless otherwise noted)
       Symbol                   Parameter                      Value           Units
VCBO                Collector-Base Voltage                       -55             V
VCEO                Collector-Emitter Voltage                    -50             V     Dimensions in inches and (millimeters)
VEBO                Emitter-Base Voltage                            -5           V
IC                  Collector Current -Continuous               -150            mA
Pc                  Collector Power Dissipation                 200             mW
TJ                  Junction Temperature                        150              
Tstg                Storage Temperature                       -55-150            

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
            Parameter                           Symbol       Test        conditions               MIN     TYP     MAX     UNIT

 Collector-base breakdown voltage               V(BR)CBO   IC=-10u A,IE=0                         -55                      V

 Collector-emitter breakdown voltage            V(BR)CEO   IC=-1mA,IB=0                           -50                      V

 Emitter-base breakdown voltage                 V(BR)EBO   IE=-10 u A,IC=0                         -5                      V

 Collector cut-off current                        ICBO     VCB=-35V,IE=0                                          -0.1     uA

 Emitter cut-off current                          IEBO     VEB=-4V,IC=0                                           -0.1     uA

 DC current gain                                  hFE      VCE=-6V,IC=-1mA                        200             400

 Collector-emitter saturation voltage           VCE(sat)   IC=-50mA,IB=-5mA                                       -0.5     V

 Base -emitter saturation voltage               VBE(sat)   IC=-50mA,IB=-5mA                                       -1.0     V

 Transition frequency                              fT      VCE=-6V,IC=-10mA                               180             MHz

 Collector output capacitance                     Cob      VCB=-6V,IE=0,f=1MHz                             4               pF
                              2SA1179
                          SOT-23 Transistor(PNP)

Typical Characteristics



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