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                                                                                                    2SA562(PNP)
                                                                                               TO-92 Bipolar Transistors

                                                                                                               TO-92
                                                                    1. EMITTER

                                                                    2. COLLECTOR

                                                                    3. BASE




Features
        Excellent hFE linearlity




                                                                                           Dimensions in inches and (millimeters)


MAXIMUM RATINGS (TA=25 unless otherwise noted)
       Symbol                                    Parameter                                           Value                    Units
VCBO                 Collector-Base Voltage                                                            -35                     V
VCEO                 Collector-Emitter Voltage                                                         -30                     V
VEBO                 Emitter-Base Voltage                                                              -5                      V
IC                   Collector Current -Continuous                                                    -500                    mA
PC                   Collector Power Dissipation                                                      500                     mW
Tj                   Junction Temperature                                                             150                      
Tstg                 Storage Temperature                                                             -55-150                   

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                        Symbol             Test      conditions      MIN           TYP       MAX       UNIT

 Collector-base breakdown voltage                V(BR)CBO         IC= -100A , IE=0             -35                                 V

 Collector-emitter breakdown voltage             V(BR)CEO         IC= -1mA , IB=0              -30                                 V

 Emitter-base breakdown voltage                  V(BR)EBO         IE= -100A, IC=0              -5                                  V

 Collector cut-off current                          ICBO          VCB=-35V, IE=0                                       -0.1        A

 Emitter cut-off current                            IEBO          VEB= -5V, IC=0                                       -0.1        A

 DC current gain                                     hFE          VCE=-1V, IC=-100mA           70                      240

 Collector-emitter saturation voltage              VCE(sat)       IC= -100mA, IB= -10mA                               -0.25        V

 Base-emitter voltage                               VBE           VCE=-1V,IC=-100mA                                    -1          V

 Transition frequency                                 fT          VCE= -6V, IC= -20mA                       200                 MHz

 Collector output capacitance                        Cob          VCB=-6V,IE=0,f=1MHz                        13                    pF


CLASSIFICATION OF hFE
     Rank                                                     O                                                   Y

     Range                                                 70-140                                            120-240
                           2SA562(PNP)
                          TO-92 Bipolar Transistors


Typical Characteristics

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