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2SA684
TO-92L Transistors (PNP)
TO-92L
4.700
5.100
1. EMITTER
7.800
8.200
2. COLLECTOR
0.600
0.800
3. BASE
0.350
3 0.550
2 13.800
1 14.200
Features
1.270 TYP
2.440
Automatic insertion by radial taping possible. 2.640
0.000 1.600
0.300
Complementary pair with 2SC1384. 0.350
3.700 0.450
4.100 1.280
1.580
4.000
MAXIMUM RATINGS(TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1 A
PC Collector Power Dissipation 0.75 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10uA, IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-2mA, IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-20V, IE=0 -0.1 A
hFE(1) VCE=-10V, IC=-500mA 85 340
DC current gain
hFE(2) VCE=-5V, IC=-1A 50
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.2 -0.4 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -0.85 -1.2 V
Transition frequency fT VCE=-10V, IE=50mA, f=200MHz 200 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 20 30 pF
CLASSIFICATION OF hFE(1)
Rank Q R S
Range 85-170 120-240 170-340
2SA684
TO-92L Transistor (PNP)
Typical Characteristics
2SA684
TO-92L Transistor (PNP)
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