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                                                                                                      2SA933AS
                                                                                                 TO-92S Transistor (PNP)

                                                            1. EMITTER                                     TO-92S

                                                            2. COLLECTOR


                                     123                    3. BASE



Features
       Excellent hFE linearity

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol                 Parameter               Value         Units
VCBO           Collector-Base Voltage           -60            V
VCEO           Collector-Emitter Voltage        -50            V
VEBO           Emitter-Base Voltage              -6            V
IC             Collector Current               -150            mA
PC             Collector Power dissipation      300            mW
                                                                                              Dimensions in inches and (millimeters)
TJ             Junction Temperature             150            
Tstg           Storage Temperature            -55-150          



ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                     Parameter                        Symbol            Test    conditions     MIN      TYP      MAX       UNIT

     Collector-base breakdown voltage                 V(BR)CBO       IC=-50A,IE=0               -60                         V

     Collector-emitter breakdown voltage              V(BR)CEO       IC=-1mA,IB=0               -50                         V

     Emitter-base breakdown voltage                   V(BR)EBO       IE=-50A,IC=0               -6                          V

     Collector cut-off current                        ICBO           VCB=-60V, IE=0                               -0.1      A

     Emitter cut-off current                          IEBO           VEB= -6V, IC=0                               -0.1      A

     DC current gain                                  hFE            VCE=-6 V, IC= -1mA        120                560

     Collector-emitter saturation voltage             VCEsat         IC= -50mA, IB=-5mA                           -0.5      V

                                                                     VCE=-12V, IC=-2mA
     Transition frequency                              fT                                                140              MHz
                                                                     f=30MHz


     Collector output capacitance                     Cob            VCB=-12V, IC=0, f=1MHz               4        5        pF



 CLASSIFICATION OF hFE
       Rank                                    Q                                      R                           S

       Range                                 120-270                                180-390                    270-560
                              2SA933AS
                          TO-92S Transistor (PNP)


Typical characteristics

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