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                                                                                           2SB1116/1116A(PNP)
                                                                                             TO-92 Bipolar Transistors

                                                                                                             TO-92
                                                                          1. EMITTER

                                                                          2. COLLECTOR

                                                                          3. BASE



Features
       High Collector Power Dissipation .
       Complementary to 2SD1616/2SD1616A

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol                    Parameter                         Value          Units
             Collector-Base Voltage    2SB1116               -60
VCBO                                                                         V
                                      2SB1116A               -80
             Collector-Emitter Voltage 2SB1116               -50
VCEO                                                                         V
                                      2SB1116A               -60
VEBO         Emitter-Base Voltage                             -6             V
IC           Collector Current -Continuous                   -1              A                Dimensions in inches and (millimeters)
PC           Collector Power Dissipation                    0.75             W
Tj           Junction Temperature                           150              
Tstg         Storage Temperature                          -55-150            
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
              Parameter                         Symbol             Test      conditions                MIN      TYP        MAX    UNIT

                                                                                           2SB1116     -60
 Collector-base breakdown voltage               V(BR)CBO      IC=-100A,IE=0                                                        V
                                                                                           2SB1116A    -80

                                                                                           2SB1116     -50
 Collector-emitter breakdown voltage            V(BR)CEO      IC=-1mA,IB=0                                                         V
                                                                                           2SB1116A    -60
 Emitter-base breakdown voltage                 V(BR)EBO      IE=-100A,IC=0                             -6                         V
                                                              VCB=-60V,IE=0                2SB1116
 Collector cut-off current                        ICBO                                                                     -0.1   A
                                                              VCB=-80V,IE=0                2SB1116A
 Emitter cut-off current                          IEBO        VEB=-6V,IC=0                                                 -0.1   A
                                                 hFE(1)       VCE=-2V,IC=-0.1A                         135                 600
 DC current gain
                                                 hFE(2)       VCE=-2V,IC=-1A                            81
 Collector-emitter saturation voltage            VCE(sat)     IC=-1A,IB=-50mA                                              -0.3    V
 Base -emitter saturation voltage                VBE(sat)     IC=-1A,IB=-50mA                                              -1.2    V
 Base -emitter voltage                            VBE         VCE=-2V,IC=-0.05A                        -0.6                -0.7    V
 Transition frequency                               fT        VCE=-2V,IC=-0.1A                          70                        MHz
 Collector output capacitance                      Cob        VCB=-10V,IE=0,f=1MHz                              25                pF
 Turn-on time                                      ton                                                          0.07               us
                                                              VCC=-10V,IC=-0.1A,IB1=-IB2=-0.01A,
 Storage time                                       ts                                                          0.7                us
                                                              VBE(Off)=2to3V
 Fall time                                          tf                                                          0.07               us
 CLASSIFICATION OF             hFE(1)
 Rank                                   L                                              K                               U

 Range                                135-270                                    200-400                         300-600
                          2SB1116/1116A(PNP)
                            TO-92 Bipolar Transistors


Typical Characteristics

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