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2sb1182


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                                                                                                    2SB1182(PNP)
                                                                                                TO-251/TO-252-2L Transistor

                                                                                                             TO-251

                                                           1.BASE


                                                           2.COLLECTOR


                                                           3EMITTER


                   1   2 3


Features
       Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                                             TO-252-2L
 Symbol                    Parameter                         Value           Units
VCBO         Collector- Base Voltage                           -40            V
VCEO         Collector-Emitter Voltage                         -32            V
VEBO         Emitter-Base Voltage                              -5             V
IC           Collector Current -Continuous                     -2             A
PC           Collector Power Dissipation                       1.5            W
TJ           Junction Temperature                             150             
Tstg         Storage Temperature                             -55-150          
                                                                                                Dimensions in inches and (millimeters)


ELECTRICAL CHARACTERISTICS (Tamb=25 unless                                         otherwise specified)
            Parameter                            Symbol               Test    conditions               MIN     TYP       MAX    UNIT

 Collector-base breakdown voltage                V(BR)CBO           IC=-50



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