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2SB1188
SOT-89 Transistor(PNP)
1. BASE
2. COLLECTOR SOT-89
1
4.6
B
4.4
2 1.6
1.8
3. EMITTER 1.4 1.4
3
2.6 4.25
Features 2.4 3.75
0.8
MIN
Low VCE(sat). 0.53
0.44 0.48 0.40
0.13 B 2x)
0.37 0.35
Complements the 2SD1766 1.5
3.0
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -2 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50A , IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -32 V
Emitter-base breakdown voltage V(BR)EBO IE=-50A, IC=0 -5 V
Collector cut-off current ICBO VCB=-20 V , IE=0 -1 A
Emitter cut-off current IEBO VEB=-4 V , IC=0 -1 A
DC current gain * hFE VCE=-3V, IC= -0.5A 82 390
Collector-emitter saturation voltage * VCE(sat) IC=-2A, IB= -0.2A -0.8 V
Transition frequency fT VCE=-5V, IC=-0.5A ,f=30MHz 100 MHz
Output capacitance Cob VCB=-10V, IE=0 ,f=1MHz 50 pF
* Measured using pulse current.
CLASSIFICATION OF hFE
Rank P Q R
Range 82-180 120-270 180-390
Marking BCP BCQ BCR
2SB1188
SOT-89 Transistor(PNP)
Typical Characteristics
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