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                                                                                                         2SB1261
                                                                                                        Transistor(PNP)


                                                                                                              TO-252-2L
                                                           1. BASE


                     1                                     2. COLLECTOR


                                                           3. EMITTER




 Features
        High hFE hFE=100 to 400
        Low vCE(sat) vCE(sat) 0.3V
                                                                                               Dimensions in inches and (millimeters)
 MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                    Parameter                             Value            Units
VCBO        Collector-Base Voltage                                   -60            V
VCEO        Collector-Emitter Voltage                                -60            V
VEBO        Emitter-Base Voltage                                     -7             V
IC          Collector Current -Continuous                            -3             A
PD          Collector Power Dissipation                               2             W
TJ          Junction Temperature                                     150            
Tstg        Storage Temperature                                 -55-150             

ELECTRICAL CHARACTERISTICS (Tamb=25                                   unless      otherwise    specified)

            Parameter                           Symbol                     Test   conditions            MIN      TYP          MAX    UNIT
 Collector-base breakdown voltage               V(BR)CBO         IC=-100

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