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                                                                                                      2SB1274(PNP)
                                                                                                         TO-220 Transistor


                                                                                                                  TO-220
                                                           1. BASE

                                                           2. COLLECTOR

                                                           3. EMITTER
                                            3
                                        2
Features
                                    1

       Wide ASO (Adoption of MBIT process).
       Low saturation voltage.
       High reliability.
       High breakdown voltage.




MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                                 Dimensions in inches and (millimeters)
 Symbol                 Parameter                          Value        Units
VCBO         Collector- Base Voltage                        -60           V
VCEO         Collector-Emitter Voltage                      -60           V
VEBO         Emitter-Base Voltage                               -6        V
IC           Collector Current -Continuous                      -3        A
PC           Collector Power Dissipation                        2         W
TJ           Junction Temperature                           150           
Tstg         Storage Temperature                          -55-150         

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                                Symbol                  Test     conditions          MIN      TYP        MAX    UNIT

 Collector-base breakdown voltage                     V(BR)CBO       IC =-1mA, IE=0                         -60                        V

 Collector-emitter breakdown voltage                  V(BR)CEO       IC=-5mA, IB=0                          -60                        V

 Emitter-base breakdown voltage                       V(BR)EBO       IE=-1mA, IC=0                          -6                         V

 Collector cut-off current                               ICBO        VCB=-40V, IE=0                                            -0.1   A

 Emitter cut-off current                                 IEBO        VEB=-4V, IC=0                                             -0.1   A

                                                         hFE(1)      VCE=-5V, IC=-500mA                     70                 280
 DC current gain
                                                         hFE(2)      VCE=-5V, IC=-3A                        20

 Collector-emitter saturation voltage                 VCE(sat)       IC=-2A, IB=-200mA                                         -1      V

 Base-emitter voltage                                    VBE         VCE=-5V, IC=-500mA                                        -1      V

 Transition frequency                                      fT        VCE=-5V, IC=-500mA                             100               MHz

 Collector output capacitance                             Cob        VCB=-10V, IE=0, f=1MHz                         60                pF

 CLASSIFICATION OF         hFE(1)

 Rank                                             Q                                       R                                S

 Range                                          70-140                                 100-200                         140-280
                          2SB1274(PNP)
                           TO-220 Transistor

Typical Characteristics

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