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                                                                                         2SB1370(PNP)
                                                                                       TO-220F Bipolar Transistors
                                                                                                  TO-220F
                                                  1. BASE


                                                  2. COLLECTOR


                                                  3. EMITTE
                             1   2   3



Features
        Breakdown Voltage High
        Reverse Cut-off Current Small
        Saturation Voltage Low
        Collector Power dissipation
             PCM : 2 W (Tamb=25)
                   30 W (Tcase=25)
                                                                                    Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
       Symbol                                    Parameter                                     Value               Units
VCBO                Collector-Base Voltage                                                      -60                  V
VCEO                Collector-Emitter Voltage                                                   -60                  V
VEBO                Emitter-Base Voltage                                                         -5                  V
IC                  Collector Current -Continuous                                                -3                  A

TJ                  Junction temperature                                                        150                  
Tstg                Storage temperature                                                       -55-150                

ELECTRICAL CHARACTERISTICS (Tamb=25 unless                                otherwise specified)
            Parameter                           Symbol         Test    conditions                MIN         TYP   MAX     UNIT

 Collector-base breakdown voltage               V(BR)CBO     IC=-50A, IE=0                        -60                         V

 Collector-emitter breakdown voltage            V(BR)CEO     IC=-1mA, IB=0                        -60                         V

 Emitter-base breakdown voltage                 V(BR)EBO     IE=-50A, IC=0                        -5                          V

 Collector cut-off current                        ICBO       VCB=-60V, IE=0                                        -10       A

 Emitter cut-off current                          IEBO       VEB=-4V, IC=0                                         -10       A

 DC current gain                                  hFE *      VCE=-5V, IC=-500mA                   100              320

 Collector-emitter saturation voltage           VCE(sat) *   IC=-2A, IB=-0.2A                                      -1.5       V

 Base-emitter saturation voltage                VBE(sat) *   IC=-2A, IB=-0.2A                                      -1.5       V

 Transition frequency                               fT       VCE=-5V, IC=-500mA,f=5MHz                       15              MHz

 Out capacitance                                  Cob        VCB= -10 V ,f=1MHZ                              80              pF

*Pulse test: tp300S, 0.02.
 CLASSIFICATION OF           hFE
 Rank                                                    E                                               F

 Range                                            100-200                                              160-320
                           2SB1370(PNP)
                          TO-220F Bipolar Transistors



Typical Characteristics

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