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                                                                                                         2SB507(PNP)
                                                                                                         TO-220 Transistor
                                                                                                                   TO-220
                                                     1. BASE

                                                     2. COLLECTOR

                                                     3. EMITTER

                                             3
                                         2
      Features                       1

             Low Collector-Emitter Saturation Voltage
             Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A
             DC Current Gain hFE=40~320@IC=-1A
             Complementray to NPN 2SD313

      MAXIMUM RATINGS (TA=25 unless otherwise noted)                                          Dimensions in inches and (millimeters)

       Symbol                            Parameter                                Value    Units
      VCBO         Collector-Base Voltage                                          -60       V
      VCEO         Collector-Emitter Voltage                                       -60       V
      VEBO         Emitter-Base Voltage                                            -5        V
      IC           Collector Current -Continuous                                   -3        A
      PC           Collector Power Dissipation                                    1.75      W
      TJ           Junction Temperature                                           150       
      Tstg         Storage Temperature                                          -55-150     

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                            Symbol                Test      conditions              MIN     TYP    MAX       UNIT

  Collector-base breakdown voltage                   V(BR)CBO        IC=-100A, IE=0                          -60                       V

  Collector-emitter breakdown voltage                V(BR)CEO        IC=-10mA, IB=0                          -60                       V

  Emitter-base breakdown voltage                     V(BR)EBO        IE=-100A, IC=0                          -5                        V

  Collector cut-off current                             ICBO         VCB=-20V, IE=0                                         -100      A

  Collector cut-off current                             ICEO         VCE=-60V, IE=0                                          -5       mA

  Emitter cut-off current                               IEBO         VEB=-4V, IC=0                                           -1       mA
                                                               (1)
                                                      hFE(1)         VCE=-2V, IC=-1A                         40             320
  DC current gain (1)
                                                               (1)
                                                      hFE(2)         VCE=-2V, IC=-0.1A                       40

  Collector-emitter saturation voltage(1)            VCE(sat) (1)    IC=-2A, IB=-200mA                                       -1        V
                          (1)                                 (1)
  Base-emitter voltage                                 VBE           VCE=-2V, IC=-1A                                        -1.5       V

  Transition frequency                                   fT          VCE=-5V, IC=-500mA,f=1MHz                5                       MHz
(1)
  Pulse Test: Pulse Width=300s,Duty Cycle2.0%
CLASSIFICATION OF               hFE(1)
  Rank                                       C                           D                           E                        F

  Range                                   40-80                        60-120                      100-200                  160-320
                          2SB507(PNP)
                          TO-220 Transistor


Typical Characteristics

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