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2SB624
SOT-23 Transistor(PNP)
1.BASE SOT-23
2.EMITTER
3.COLLECTOR
Features
High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA)
Complimentary to 2SD596.
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units Dimensions in inches and (millimeters)
VCBO Collector-Base Voltage -30 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -700 mA
PD Total Device Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -30 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-30 V , IE=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 A
hFE(1)* VCE= -1V, IC= -100mA 110 400
DC current gain
hFE(2)* VCE=-1V, IC= -700mA 50
Collector-emitter saturation voltage VCE(sat) * IC=-700 mA, IB= -70mA -0.6 V
Base-emitter voltage VBE* VCE=-6V, IC=-10mA -0.6 -0.7 V
Transition frequency fT VCE= -6V, IC= -10mA 160 MHz
Collector Output Capacitance Cob VCB=-6V,IE=0,f=1MHZ 17 pF
* Pulse test : Pulse width 350s,Duty Cycle2%.
CLASSIFICATION OF hFE(1)
Marking BV1 BV2 BV3 BV4 BV5
Range 110-180 135-220 170-270 200-320 250-400
2SB624
SOT-23 Transistor(PNP)
Typical Characteristics
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