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2SB766A
SOT-89 Transistor(PNP)
1. BASE
2. COLLECTOR SOT-89
1
4.6
B
2 3. EMITTER 1.6
4.4
1.8
1.4 1.4
3
Features
2.6 4.25
2.4 3.75
0.8
MIN
Large collector power dissipation PC 0.53
0.44 0.48 0.40
2x)
Complementary to 2SD874A 0.37
0.13 B 0.35
1.5
3.0
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-10A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-2mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V
Collector cut-off current ICBO VCB=-20V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 A
hFE(1) VCE=-10V,IC=-500mA 85 340
DC current gain
hFE(2) VCE=-5V,IC=-1A 50
Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -0.2 -0.4 V
Base-emitter saturation voltage VBE(sat) IC=-500mA,IB=-50mA -0.85 -1.2 V
Transition frequency fT VCE=-10V,IC=-50mA,f=200MHz 200 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 30 pF
CLASSIFICATION OF hFE(1)
Rank Q R S
Range 85-170 120-240 170-340
MAKING BQ BR BS
2SB766A
SOT-89 Transistor(PNP)
Typical Characteristics
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