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2sb834


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                                                                                               2SB834(PNP)
                                                                                                 TO-220 Transistor


                                                                                                         TO-220
                                                            1. BASE

                                                            2. COLLECTOR

                                                            3. EMITTER
                                              3
                                          2
                                      1
Features
         Low Collector -emitter saturation voltage
            VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A
         DC current Gain
       hFE =60-200@ IC=0.5A
         Complementary to NPN 2SD880

MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                        Parameter                          Value         Units       Dimensions in inches and (millimeters)
VCBO           Collector- Base Voltage                                -60        V
VCEO           Collector-Emitter Voltage                              -60        V
VEBO           Emitter-Base Voltage                                   -7         V
IC             Collector Current -Continuous                          -3         A
PC             Collector Power Dissipation                            1.5        W
TJ             Junction Temperature                                   150        
Tstg           Storage Temperature                               -55-150         

 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
               Parameter                          Symbol          Test      conditions            MIN         TYP   MAX    UNIT
 Collector-base breakdown voltage                 V(BR)CBO      IC=-1mA,IE=0                       -60                      V
 Collector-emitter breakdown voltage              V(BR)CEO      IC =-50mA,IB=0                     -60                      V
 Emitter-base breakdown voltage                   V(BR)EBO      IE=-1mA,IC=0                       -7                       V
 Collector cut-off current                          ICBO        VCB=-60V,IE=0                                       -100    A
 Emitter cut-off current                            IEBO        VEB=-7V,IC=0                                        -100    A
                                                   hFE(1)*      VCE=-5V,IC=-500mA                  60               200
 DC current gain
                                                   hFE(2)*      VCE=-5V,IC=-3A                     20
 Collector-emitter saturation voltage             VCE(sat)*     IC=-3A,IB=-0.3A                                      -1     V
 Base-emitter voltage                              VBE*         VCE=-5V,IC=-500mA                                    -1     V
 Transition frequency                                fT         VCE=-5V,IC=-500mA, f=1MHz                      9           MHz
 Turn-on Time                                        ton                                                      0.4           s
                                                                VCC=-30V,Ic=-2A,
 Storage Time                                       tstg                                                      1.7           s
                                                                IB!=IB2=-0.2A
 Turn-off Time                                       toff                                                     0.5           s
*Pulse test.
CLASSIFICATION OF          hFE(1)
 Rank                                                       O                                             Y
 Range                                               60-120                                             100-200
                          2SB834(PNP)
                          TO-220 Transistor


Typical Characteristics



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