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                                                                                          2SC1318(NPN)
                                                                                         TO-92 Bipolar Transistors

                                                                                                      TO-92
                                                               1. EMITTER

                                                               2. COLLECTOR

                                                               3. BASE



Features
        Collector output capacitance :
             Cob=11 pF (TYP),20 pF (MAX)

MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol              Parameter                   Value       Units
 VCBO       Collector-Base Voltage                 80          V
 VCEO       Collector-Emitter Voltage              70          V
 VEBO       Emitter-Base Voltage                    5          V
 IC         Collector Current -Continuous         500         mA                      Dimensions in inches and (millimeters)
 PC         Collector Power Dissipation           750         mW
 Tj         Junction Temperature                  150          
 Tstg       Storage Temperature                 -55-150        

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                           Symbol      Test     conditions                 MIN     TYP       MAX   UNIT

Collector-base breakdown voltage                V(BR)CBO   IC =10A,IE=0                          80                       V

Collector-emitter breakdown voltage             V(BR)CEO   IC=2mA,IB=0                           70                       V

Emitter-base breakdown voltage                  V(BR)EBO   IE=10A,IC=0                           5                        V

Collector cut-off current                         ICBO     VCB=20V,IE=0                                           0.1    A

                                                 hFE(1)    VCE=10V,IC=150mA                      85               340
DC current gain
                                                 hFE(2)    VCE=10V,IC=500mA                      40

Collector-emitter saturation voltage            VCE(sat)   IC=300mA,IB=30mA                                       0.6     V

Base-emitter saturation voltage                 VBE(sat)   IC=300mA,IB=30mA                                       1.5     V

Transition frequency                               fT      VCE=10V,IC=50mA,f=200MHz                     120             MHz

Collector output capacitance                      Cob      VCB=10V,IE=0,f=1MHz                           11       20     pF



CLASSIFICATION OF           hFE(1)
Rank                                        Q                                     R                           S

Range                                   85-170                              120-240                       170-340
                          2SC1318(NPN)
                          TO-92 Bipolar Transistors

Typical Characteristics

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