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                                                                                                 2SC2411
                                                                                           SOT-23 Transistor(NPN)

                                                1. BASE
                                                                                                       SOT-23
                                                2. EMITTER
                                                3. COLLECTOR

Features
        High ICMax.ICMax. = 0.5mA
        Low VCE(sat).Optimal for low voltage operation.
        Complements the 2SA1036

MAXIMUM RATINGS (TA=25 unless otherwise noted)
  Symbol               Parameter                 Value          Units
 VCBO           Collector-Base Voltage              40           V
 VCEO           Collector-Emitter Voltage           32           V                        Dimensions in inches and (millimeters)

 VEBO           Emitter-Base Voltage                5            V
 IC             Collector Current                   500         mA
 PC             Collector Power Dissipation         200         mW
 TJ             Junction Temperature                150          
 Tstg           Storage Temperature             -55-150          


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
             Parameter                              Symbol        Test   conditions              MIN     TYP        MAX   UNIT

Collector-base breakdown voltage                    V(BR)CBO    IC=100A,IE=0                      40                       V

Collector-emitter breakdown voltage                 V(BR)CEO    IC=1mA,IB=0                       32                       V

Emitter-base breakdown voltage                      V(BR)EBO    IE=100A,IC=0                       5                       V

Collector cut-off current                               ICBO    VCB=20V,IE=0                                         1     A

Emitter cut-off current                                 IEBO    VEB=4V,IC=0                                          1     A

DC current gain                                         hFE     VCE=3V,IC=100mA                   82                390

Collector-emitter saturation voltage                 VCE(sat)   IC=500mA,IB=50mA                                    0.4    V

Transition frequency                                      fT    VCE=5V,IC=20mA,f=100MHz                  250              MHz

Collector output capacitance                            Cob     VCB=10V,IE=0,f=1MHz                       6.0              pF



CLASSIFICATION OF               hFE
Rank                                            P                                     Q                         R

Range                                         82-180                           120-270                      180-390

Marking                                        CP                                 CQ                            CR
                              2SC2411
                          SOT-23 Transistor(NPN)


Typical characteristics

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