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2SC2482
TO-92L Transistor (NPN)
TO-92L
1. EMITTER
4.700
5.100
2. COLLECTOR
3. BASE
7.800
3 8.200
2
Features
1
0.600
0.800
High voltage :Vceo=300V
0.350
Small collector output capacitance: Cob=3.0pF(Typ) 0.550
13.800
14.200
MAXIMUM RATINGS (TA=25 unless otherwise noted)
1.270 TYP
2.440
Symbol Parameter Value Units 2.640
VCBO Collector-Base Voltage 300 V 0.000 1.600
0.300
VCEO Collector-Emitter Voltage 300 V 0.350
3.700 0.450
VEBO Emitter-Base Voltage 7 V 4.100 1.280
1.580
IC Collector Current -Continuous 0.1 A
4.000
PC Collector Power Dissipation 0.9 W
TJ Junction Temperature 150 Dimensions in inches and (millimeters)
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO IC= 3mA ,IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A,IC=0 7 V
Collector cut-off current ICBO VCB= 240 V, IE=0 1.0 A
Collector cut-off current ICEO VCB= 220 V, IB=0 5.0 A
Emitter cut-off current IEBO VEB= 7V, IC=0 1.0 A
DC current gain hFE VCE=10V, IC=20mA 30 150
Collector-emitter saturation voltage VCE(sat) IC= 10mA, IB=1mA 1.0 V
Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA 1.0 V
Transition frequency fT VCE=10V, IC=20mA,f=30MHz 50 MHz
Collector output capacitance Cob VCB=20V, IE=0, f=1MHz 3 pF
CLASSIFICATION OF hFE
Rank O Y
Range 30-90 90-150
2SC2482
TO-92L Transistor (NPN)
Typical characteristics
2SC2482
TO-92L Transistor (NPN)
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