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                                                                                       2SC2551(NPN)
                                                                                      TO-92 Bipolar Transistors

                                                                                               TO-92
                                                                1. EMITTER

                                                                2. COLLECTOR

                                                                3. BASE




Features
        High voltage
        Low saturation voltage
        Small collector output capacitance
        Complementary to 2SA1091

MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                  Parameter                Value      Units
VCBO           Collector-Base Voltage              300         V
VCEO           Collector-Emitter Voltage           300         V                  Dimensions in inches and (millimeters)
VEBO           Emitter-Base Voltage                    6       V
IC             Collector Current -Continuous       100        mA
PC             Collector power dissipation         400        mW
Tj             Junction Temperature                150         
Tstg           Storage Temperature               -55-150       
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
               Parameter                       Symbol        Test    conditions              MIN      TYP    MAX     UNIT
 Collector-base breakdown voltage              V(BR)CBO    Ic=100uA, IE=0                    300                      V
 Collector-emitter breakdown voltage           V(BR)CEO    Ic=1mA, IB=0                      300                      V
 Emitter-base breakdown voltage                V(BR)EBO    IE=100A, IC=0                      6                       V
 Collector cut-off current                       ICBO      VCB=300V, IE=0                                     0.1     A
 Emitter cut-off current                         IEBO      VEB=6V, IC=0                                       0.1     A
                                                hFE(1)     VCE=10V, IC=20mA                  30              150
 DC current gain
                                                hFE(2)     VCE=10V, IC=1mA                   20
 Collector-emitter saturation voltage          VCE(sat)    IC=20mA, IB=2mA                                    0.5     V
 Base-emitter saturation voltage               VBE(sat)    IC=20mA, IB=2mA                                    1.2     V
 Transition frequency                             fT       VCE=10V, IC=20mA                           80             MHz
 Collector output capacitance                    Cob       VCB=20V,IE=0,f=1MHz                                4       pF


     CLASSIFICATION OF hFE(1)
       Rank                                       R                                               O

       Range                                    30-90                                        50-150
                          2SC2551(NPN)
                          TO-92 Bipolar Transistors

Typical Characteristics
2SC2551(NPN)
TO-92 Bipolar Transistors

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