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TO-92S Transistor (NPN)
1. EMITTER TO-92S
2. COLLECTOR
123 3. BASE
Features
Small reverse transfer capacitance
Low Noise Figure
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current -Continuous 20 mA Dimensions in inches and (millimeters)
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 4 V
Collector cut-off current ICBO VCB=40V, IE=0 0.5 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.5 A
DC current gain hFE VCE=6V, IC=1mA 40 200
Reverse Transfer Capacitance Cre VCE=6V, f=1MHz 0.7 pF
Collector-Base Time Constant Cc
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