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                                                                                                  2SC2712
                                                                                           SOT-23 Transistor(NPN)


                                           1. BASE                                                   SOT-23
                                           2. EMITTER
                                           3. COLLECTOR



Features
      Low Noise: NF=1 dB (Typ),10dB(MAX)
      Complementary to 2SA1162

MAXIMUM RATINGS (TA=25 unless otherwise noted)

  Symbol                Parameter                     Value       Units
 VCBO        Collector-Base Voltage                     60          V
 VCEO        Collector-Emitter Voltage                  50          V
                                                                                        Dimensions in inches and (millimeters)
 VEBO        Emitter-Base Voltage                        5          V
 IC          Collector Current -Continuous            150          mA
 PC          Collector Power Dissipation              150         mW
 TJ          Junction Temperature                     150          
 Tstg        Storage Temperature                     -55-150       

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                    Symbol              Test     conditions       MIN      TYP       MAX        UNIT

 Collector-base breakdown voltage            V(BR)CBO         IC= 100A, IE=0                60                            V

 Collector-emitter breakdown voltage         V(BR)CEO         IC=1mA ,    IB=0              50                            V

 Emitter-base breakdown voltage              V(BR)EBO         IE= 100A, IC=0                5                             V

 Collector cut-off current                     ICBO           VCB= 60 V, IE=0                                 0.1        A

 Emitter cut-off current                       IEBO           VEB=5V, IC=0                                    0.1        A

 DC current gain                                hFE           VCE=6V, IC=2mA                70                700

 Collector-emitter saturation voltage         VCE(sat)        IC= 100mA, IB=10mA                     0.1      0.25        V

 Transition frequency                            fT           VCE=10V, IC= 1mA              80                           MHz

 Output capacitance                            Cob            VCB=10V, IE=0,f=1 MHz                  2.0      3.5         pF

                                                              VCE=6V,IC=0.1mA,f=1kHz,
 Noise Figure                                   NF                                                   1.0       10        dB
                                                              Rg=10k
 CLASSIFICATION OF hFE
  Rank                              O                             Y                       GR                        BL
  Range                         70-140                         120-240                  200-400                350-700
  Marking                           LO                            LY                      LG                        LL
                              2SC2712
                          SOT-23 Transistor(NPN)


Typical Characteristics
    2SC2712
SOT-23 Transistor(NPN)

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