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2sc2717


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                                                                                            2SC2717(NPN)
                                                                                            TO-92 Bipolar Transistors


                                                                        1. BASE
                                                                                                        TO-92
                                                                        2. EMITTER

                                                                        3. COLLECTOR




Features
       High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ)
       Good Linearity of hFE.


MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                 Parameter                  Value       Units
VCBO         Collector-Base Voltage                  30             V
VCEO         Collector-Emitter Voltage               25             V
VEBO         Emitter-Base Voltage                     4             V                  Dimensions in inches and (millimeters)

IC           Collector Current -Continuous           50         mA
PC           Collector Power Dissipation             300        mW
Tj           Junction Temperature                    125        
Tstg         Storage Temperature               -55-125          




ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
             Parameter                       Symbol          Test       conditions               MIN      TYP    MAX     UNIT

 Collector-base breakdown voltage            V(BR)CBO      IC=100A,IE=0                           30                       V

 Collector-emitter breakdown voltage         V(BR)CEO      IC=10mA,IB=0                           25                       V

 Emitter-base breakdown voltage              V(BR)EBO      IE=100A,IC=0                            4                       V

 Collector cut-off current                     ICBO        VCB=30V,IE=0                                           0.1     A

 Emitter cut-off current                       IEBO        VEB=3V,IC=0                                            0.1     A

 DC current gain                               hFE         VCE=12.5V,IC=12.5mA                    40              240

 Collector-emitter saturation voltage        VCE(sat)      IC=15mA,IB=1.5mA                                       0.2      V

 Base-emitter saturation voltage             VBE(sat)      IC=15mA,IB=1.5mA                                       1.5      V

 Transition frequency                           fT         VCE=12.5V,IC=12.5mA                    300                     MHz

 Collector output capacitance                  Cob         VCB=10V,IE=0,f=30MHz                   0.8             2.0     pF
                                                .rbb'
 Collector-base time constant                 CC           VCB=10V,IE=-1mA,f=30MHz                                25       ps

 Power gain (fig.)                            Gpe          VCC=12.5V,IE=-12.5mA,f=45MHz           28              36      dB
                          2SC2717(NPN)
                          TO-92 Bipolar Transistors


Typical Characteristics
2SC2717(NPN)
TO-92 Bipolar Transistors



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