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                                                                                                 2SC2999
                                                                                            TO-92S Transistor (NPN)

                                                 1. EMITTER
                                                                                                        TO-92S
                                                 2. COLLECTOR

                                                 3. BASE
                              123
Features
       High fT(fT=750MHZ typ) and small Cre (Cre=0.6pF typ)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                Parameter                    Value        Units
VCBO         Collector-Base Voltage                   25           V
VCEO         Collector-Emitter Voltage                20           V
VEBO         Emitter-Base Voltage                         3        V
IC           Collector Current -Continuous            30          mA
PC           Collector Power Dissipation             400          mW
TJ           Junction Temperature                    125          
Tstg         Storage Temperature                   -40-125        
                                                                                         Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise specified)

             Parameter                            Symbol        Test     conditions                MIN     TYP        MAX   UNIT

 Collector-base breakdown voltage                 V(BR)CBO    IC=100A, IE=0                         25                       V

 Collector-emitter breakdown voltage              V(BR)CEO    IC=1mA, IB=0                          20                       V

 Emitter-base breakdown voltage                   V(BR)EBO    IE=100A,IC=0                          3                        V

 Collector cut-off current                          ICBO      VCB=10V, IE=0                                           0.1   A

 Emitter cut-off current                            IEBO      VEB=3V,IC=0                                             0.1   A

 DC current gain                                    hFE       VCE=6V, IC=1mA                        40                200

 Transition frequency                                fT       VCE=6V, IC=4mA                       450     750              MHz

 Reverse Transfer Capacitance                       Cre       VCB=6V,    f=1MHz                             0.6       0.9   pF

 Base-to-Collector Time Constant                   rbb'cc     VCE=6V, IC=1mA,,f=31.9MHZ                               19     ps

 Noise figure                                       NF        VCE=6V, IC=1mA,,f=100MHZ                      2.2             dB



 CLASSIFICATION OF            hFE
 Rank                                        C                                    D                               E

 Range                                     40-80                               60-120                        100-200
   2SC2999
TO-92S Transistor (NPN)
   2SC2999
TO-92S Transistor (NPN)
   2SC2999
TO-92S Transistor (NPN)
   2SC2999
TO-92S Transistor (NPN)
   2SC2999
TO-92S Transistor (NPN)

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