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TO-92L Transistor (NPN)
TO-92L
1. EMITTER
4.700
5.100
2. COLLECTOR
7.800
3. BASE 8.200
3
2
1 0.600
Features 0.800
Power dissipation PCM: 0.75 W (Tamb=25) 0.350
0.550
Low saturation voltage (VCE(sat)=0.15V at 500mA) 13.800
14.200
Complementary pair with 2SA934
1.270 TYP
MAXIMUM RATINGS (TA=25 unless otherwise noted)
2.440
2.640
Symbol Parameter Value Units
0.000 1.600
VCBO Collector-base voltage 40 V 0.300
VCEO Collector-Emitter Voltage 32 V 0.350
3.700 0.450
VEBO Emitter-Base Voltage 5 V
4.100 1.280
IC Collector Current -Continuous 1 A 1.580
PC Collector Power Dissipation 750 mW 4.000
TJ Junction Temperature 150
Dimensions in inches and (millimeters)
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A , IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 32 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector cut-off current ICBO VCB=20V , IE=0 0.5 A
Emitter cut-off current IEBO VEB=4V , IC=0 0.1 A
DC current gain hFE VCE=3V, IC= 100mA 80 400
Collector-emitter saturation voltage VCE(sat) IC= 500m A, IB= 50mA 0.4 V
Transition frequency fT VCE=5V, IE=-50mA 50 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 30 pF
2SC2060
TO-92L Transistor (NPN)
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