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2SC2060
TO-92MOD Transistor (NPN)
TO-92MOD
5.800
1. EMITTER 6.200
1
2 2. COLLECTOR
3 8.400
3. BASE 8.800
0.900
1.100
0.400
0.600
Features 13.800
14.200
Power dissipation PCM: 0.75 W (Tamb=25)
Low saturation voltage (VCE(sat)=0.15V at 500mA) 1.500 TYP
2.900
3.100
Complementary pair with 2SA934
0.000 1.600
0.380
0.400 4.700
0.500 5.100
1.730
4.000 2.030
MAXIMUM RATINGS* TA=25 unless otherwise noted Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-base voltage 40 V
VCEO Collector-Emitter Voltage 32 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PD Total Device Dissipation 750 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A , IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 32 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector cut-off current ICBO VCB=20V , IE=0 0.5 A
Emitter cut-off current IEBO VEB=4V , IC=0 0.1 A
DC current gain hFE(1) VCE=3V, IC= 100mA 80 400
Collector-emitter saturation voltage VCE(sat) IC= 500m A, IB= 50mA 0.4 V
Transition frequency fT VCE=5V, IE=-50mA 50 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 30 pF
2SC2060
TO-92MOD Transistor (NPN)
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