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                                                                                            2SC2216(NPN)
                                                                                            TO-92 Bipolar Transistors


                                                        1. BASE                                       TO-92
                                                        2. EMITTER

                                                        3. COLLECTOR




Features
       Amplifier dissipation NPN Silicon


MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                        Parameter                   Value          Units
VCBO           Collector-Base Voltage                        50             V
VCEO           Collector-Emitter Voltage                     45             V
VEBO           Emitter-Base Voltage                          4              V
                                                                                         Dimensions in inches and (millimeters)
IC             Collector Current -Continuous                 50           mA
PC             Collector Dissipation                        300           mW
TJ             Junction Temperature                         125             
Tstg           Storage Temperature                         -55-125          

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
               Parameter                       Symbol              Test     conditions     MIN      TYP      MAX      UNIT

     Collector-base breakdown voltage          V(BR)CBO          IC= 100A, IE=0             50                          V
     Collector-emitter breakdown voltage       V(BR)CEO          IC= 10 mA , IB=0           45                          V
     Emitter-base breakdown voltage            V(BR)EBO          IE= 100A, IC=0              4                          V
     Collector cut-off current                   ICBO            VCB=50 V       IE=0                          0.1      A
     Emitter cut-off current                     IEBO            VEB= 3 V, IC=0                               0.1      A
     DC current gain                             hFE             VCE=12.5V, IC=12.5 mA      40                140
     Collector-emitter saturation voltage      VCE (sat)         IC= 15mA, IB=1.5 mA                          0.2       V
     Bass-emitter saturation voltage           VBE (sat)         IC= 15mA, IB=1.5 mA                          1.5       V
     Transition frequency                         fT             VCE=12.5 V, IC=12.5mA      300                       MHz
                                                                 VCB=10V,IE=0,
     Collector output capacitance                Cob                                                          2.0      pF
                                                                 f=30MHz
                          2SC2216(NPN)
                          TO-92 Bipolar Transistors




Typical Characteristics

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