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2SC2235
TO-92L Transistor (NPN)
TO-92L
4.700
1. EMITTER 5.100
2. COLLECTER
7.800
8.200
3. BASE 0.600
3 0.800
2
Features 1
0.350
0.550
Complementary to 2SA965
B B
13.800
14.200
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol
B
Parameter Value Units 1.270 TYP
VCBO B
B Collector-Base Voltage 120 V 2.440
2.640
VCEO Collector-Emitter Voltage 120 V
0.000
B
B
1.600
0.300
VEBO
B
B Emitter-Base Voltage 5 V
0.350
IC B
B Collector Current -Continuous 0.8 A 3.700 0.450
4.100 1.280
PC B
B Collector Power Dissipation 0.9 W 1.580
TJ B
B
B
Junction Temperature 150 4.000
Tstg Storage Temperature -55to+150
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBOB B IC=1mA,IE=0
B B B B 120 V
Collector-emitter breakdown voltage V(BR)CEOB B IC=10mA,IB=0
B B B B 120 V
Emitter-Base breakdown voltage V(BR)EBO B B IE=1mA,IC=0
B B B B 5 V
Collector cut-off current ICBO
B B VCB=120V,IE=0
B B B B 0.1 A
Emitter cut-off current IEBOB B VEB=5V,IC=0
B B B B 0.1 A
DC current gain hFE B B VCE=5V,IC=100mA
B B B B 80 240
Collector-emitter saturation voltage VCE(sat)
B B IC=500mA,IB=50mA
B B B B 1.0 V
Base-emitter voltage VBE B B IC=500mA, VCE=5V
B B B B 1.0 V
Transition frequency fT B B VCE=5V, IC=100mA
B B B B 120 MHz
VCE=10V, IE=0
B B B B
Collector output capacitance Cob 30 pF
f=1MHz
CLASSIFICATION OF hFE
Rank O Y
Range 80-160 120-240
2SC2235
TO-92L Transistor (NPN)
Typical Characteristics
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