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2SC2383
TO-92L Transistor (NPN)
TO-92L
4.700
5.100
1. EMITTER
7.800
2. COLLECTOR 8.200
0.600
0.800
3. BASE
3 0.350
2 0.550
1 13.800
Features
14.200
High voltage: VCEO=160V 1.270 TYP
2.440
Large continuous collector current capability 2.640
0.000
Complementary to 2SA1013 0.300
1.600
0.350
3.700 0.450
4.100 1.280
1.580
4.000
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 160 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 0.75 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A , IE=0 160 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 6 V
Collector cut-off current ICBO VCB=150V, IE=0 1 A
Collector cut-off current ICER VCB=150V,REB= 10M 10 A
Emitter cut-off current IEBO VEB=6V, IC=0 1 A
hFE1 VCE=5V, IC=200mA 60 320
DC current gain
hFE2 VCE=5V, IC=10mA 40
Collector-emitter saturation voltage VCE(sat) IC=500m A, IB=50mA 1 V
Base-emitter voltage VBE IC=5mA, VCE= 5V 0.75 V
Transition frequency fT VCE=5V, IC=200mA 20 MHz
CLASSIFICATION OF hFE1
Rank R O Y
Range 60-120 100-200 160-320
2SC2383
TO-92L Transistor (NPN)
Typical characteristics
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