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                                                                                        2SC388(NPN)
                                                                                      TO-92 Bipolar Transistors

                                                                                                    TO-92
                                                         1. EMITTER

                                                         2. COLLECTOR

                                                         3. BASE




Features
       TV final pictureif amplifier applications

MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                      Parameter                     Value          Units
VCBO       Collector-Emitter Voltage                          30               V
VCEO       Collector-Emitter Voltage                          25               V
VEBO       Emitter-Base Voltage                               4                V
IC         Collector Current -Continuous                      50           mA
                                                                                   Dimensions in inches and (millimeters)
Pc         Collector Power dissipation                        300          mW
Tj         Junction Temperature                               150              
Tstg       Storage Temperature                            -55-150              
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
           Parameter                       Symbol      Test       conditions                 MIN      TYP    MAX     UNIT

 Collector-base breakdown voltage          V(BR)CBO   Ic=10A,IE=0                             30                       V

 Collector-emitter breakdown voltage       V(BR)CEO   Ic=5mA,IB=0                             25                       V

 Emitter-base breakdown voltage            V(BR)EBO   IE=10A,IC=0                              4                       V

 Collector cut-off current                   ICBO     VCB=30V,IE=0                                            0.1     A

 Emitter cut-off current                     IEBO     VEB=3V,IC=0                                             0.1     A

 DC current gain                            hFE(1)    VCE=12.5V,IC=12.5mA                     20              200

 Collector-emitter saturation voltage      VCE(sat)   IC=15mA,IB=1.5mA                                        0.2      V

 Base-emitter saturation voltage           VBE(sat)   IC=15mA,IB=1.5mA                                        1.2      V

 Transition frequency                         fT      VCE=12.5V,IC=12.5mA                     300                     MHz

 Collector output capacitance                Cob      VCB=10V,IE=0,f=1MHz                     0.8              2       pF


                                                      VCC=12.5V,IE=-12.5mA,
 Power Gain                                 Gpe                                               28               36      dB
                                                      f=45MHZ
                           2SC388(NPN)
                          TO-92 Bipolar Transistors

Typical Characteristics

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