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                                                                                                     2SC3052
                                                                                                 SOT-23 Transistor(NPN)


                                          1. BASE                                                        SOT-23
                                          2. EMITTER
                                          3. COLLECTOR




Features
    Low collector to emitter saturation voltage
    VCE(sat)=0.3V max(@IC=100mA,IB=10mA)
    Excellent linearity of DC forward current gain


MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                            Dimensions in inches and (millimeters)
Symbol                Parameter                      Value        Units
 VCBO       Collector- Base Voltage                     50          V
 VCEO       Collector-Emitter Voltage                   50          V
 VEBO       Emitter-Base Voltage                        6           V
   IC       Collector Current -Continuous              0.2          A
  PC        Collector Power Dissipation                150         mW
  TJ        Junction Temperature                       125          
  Tstg      Storage Temperature                     -55-125         

ELECTRICAL CHARACTERISTICS (Tamb=25                                 unless       otherwise specified)
            Parameter                           Symbol                    Test      conditions            MIN        MAX   UNIT

 Collector-base breakdown voltage               V (BR) CBO      IC = 100 A,      IE=0                      50                V
 Collector-emitter breakdown voltage            V (BR) CEO      IC = 100 A, IB=0                           50                V
 Emitter-base breakdown voltage                 V (BR) EBO      IE= 100 A, IC=0                            6                 V
 Collector cut-off current                            ICBO      VCB= 50 V , IE=0                                     0.1    A
 Emitter cut-off current                              IEBO      VEB= 6V , IC=0                                       0.1    A
                                                      hFE(1)    VCE= 6V, IC= 1mA                          150        800
 DC current gain
                                                     hFE(2)     VCE= 6V, IC= 0.1mA                         50
 Collector-emitter saturation voltage               VCE (sat)   IC=100mA, IB= 10mA                                   0.3     V
 Base-emitter saturation voltage                    VBE (sat)   IC= 100mA, IB= 10mA                                   1      V
 Transition frequency                                  fT       VCE= 6V, IC= 10mA                         180              MHz
 Collector output capacitance                         Cob       VCE=6V, IE=0, f=1MHz                                  4     pF
 Noise figure                                         NF        VCE=6V,IE=-0.1mA, f=1KHz, RG=2K                      15     dB


CLASSIFICATION OF hFE(1)
    Rank                       E                                          F                                     G

    Range                    150~300                                    250~500                             400~800

    Marking                    LE                                         LF                                    LG
                              2SC3052
                          SOT-23 Transistor(NPN)


Typical Characteristics
    2SC3052
SOT-23 Transistor(NPN)

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