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                                                                                               2SC4617
                                                                                         SOT-523 Transistor(NPN)

                                                                                                    SOT-523
                                             1. BASE
                                             2. EMITTER
                                             3. COLLECTOR




Features
        Low Cob:Cob=2.0pF(Typ)
        Complement to 2SA1774



                                                                                      Dimensions in inches and (millimeters)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

       Symbol                                   Parameter                                     Value                  Units
VCBO                Collector-Base Voltage                                                     60                     V
VCEO                Collector-Emitter Voltage                                                  50                     V
VEBO                Emitter-Base Voltage                                                        7                     V
IC                  Collector Current -Continuous                                              150                    mA
PC                  Collector Power Dissipation                                                150                    mW
TJ                  Junction Temperature                                                       150                    
Tstg                Storage Temperature                                                      -55-150                  

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                           Symbol       Test   conditions                  MIN      TYP      MAX        UNIT

 Collector-base breakdown voltage               V(BR)CBO   IC=50uA, IE=0                            60                        V

 Collector-emitter breakdown voltage            V(BR)CEO   IC=1mA, IB=0                             50                        V

 Emitter-base breakdown voltage                 V(BR)EBO   IE=50uA, IC=0                            7                         V

 Collector cut-off current                        ICBO     VCB=60V, IE=0                                             0.1     A

 Emitter cut-off current                          IEBO     VEB=7V, IE=0                                              0.1     A

 DC current gain                                  hFE      VCE=6V, IC=1mA                       120                  560

 Collector-emitter saturation voltage           VCE(sat)   IC=50mA, IB=5mA                                           0.4      V

 Transition frequency                              fT      VCE=12V, IC=2mA, f=100MHz                     180                 MHz

 Collector output capacitance                     Cob      VCB=12V, IE=0, f=1MHz                                     3.5     pF

CLASSIFICATION OF            hFE
 Rank                                            Q                               R                               S

 Range                                       120-270                         180-390                           270-560

 Marking                                        BQ                               BR                              BS
                              2SC4617
                          SOT-523 Transistor(NPN)


Typical characteristics

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