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                                                                                              2SC4003(NPN)
                                                                                           TO-251/TO-252-2L Transistor
                                                                                                        TO-251

                                                   1. BASE


                                                     2. COLLECTOR


                                                     3. EMITTER

                     1   2 3

Features
       High hFE      hFE=60 to 200
       low VCE(sat) VCE(sat)=0.6V

MAXIMUM RATINGS (TA=25 unless otherwise noted)                                                          TO-252-2L
Symbol                Parameter             Value            Units
VCBO        Collector-Base Voltage           400               V
VCEO        Collector-Emitter Voltage        400               V
VEBO        Emitter-Base Voltage               5               V
IC          Collector Current -Continuous     0.2              A
PC          Collector Power Dissipation        1               W
TJ          Junction Temperature             150               
Tstg        Storage Temperature             -55-150                                      Dimensions in inches and (millimeters)

 ELECTRICAL CHARACTERISTICS (Tamb=25 unless                                  otherwise   specified)
             Parameter                       Symbol            Test   conditions                  MIN        TYP   MAX    UNIT

 Collector-base breakdown voltage            V(BR)CBO        IC=10

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