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                                                                                                     2SC4081
                                                                                             SOT-323 Transistor(NPN)

                                           1. BASE                                                     SOT-323
                                           2. EMITTER
                                           3. COLLECTOR


Features
        Excellent hFE linearity
        Complements the 2A1576A


MAXIMUM RATINGS (TA=25 unless otherwise noted)

  Symbol                  Parameter                     Value            Units
 VCBO        Collector-Base Voltage                       60              V
                                                                                           Dimensions in inches and (millimeters)
 VCEO        Collector-Emitter Voltage                    50              V
 VEBO        Emitter-Base Voltage                          7              V
 IC          Collector Current -Continuous               150             mA
 PC          Collector Power Dissipation                 200             mW
 TJ          Junction Temperature                        150              
 Tstg        Storage Temperature                    -55-150               

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

           Parameter                            Symbol            Test    conditions           MIN     TYP     MAX       UNIT

Collector-base breakdown voltage                V(BR)CBO        IC=50A,IE=0                    60                         V

Collector-emitter breakdown voltage             V(BR)CEO        IC=1mA,IB=0                    50                         V

Emitter-base breakdown voltage                  V(BR)EBO        IE=50A,IC=0                     7                         V

Collector cut-off current                         ICBO          VCB=60V,IE=0                                   0.1       A

Emitter cut-off current                           IEBO          VEB=7V,IC=0                                    0.1       A

DC current gain                                  hFE(1)         VCE=6V,IC=1mA                  120             560

Collector-emitter saturation voltage            VCE(sat)        IC=50mA,IB=5mA                                 0.4        V

Transition frequency                               fT           VCE=12V,IC=2mA,f=30MHz                 180               MHz

Collector output capacitance                      Cob           VCB12V,IE=0,f=1MHz                             3.5        pF



CLASSIFICATION OF           hFE(1)
Rank                                       Q                                           R                             S
Range                                  120-270                                   180-390                       270-560
Marking                                    BQ                                      BR                             BS
                              2SC4081
                          SOT-323 Transistor(NPN)

Typical Characteristics

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