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                                                                                                       2SC5585
                                                                                                 SOT-523 Transistor(NPN)


                                               1. BASE                                                      SOT-523
                                               2. EMITTER
                                               3. COLLECTOR




Features
       High current.
       Low VCE(sat). VCE(sat)250mV at IC = 200mA / IB = 10mA

MARKING: BX

                                                                                               Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                     Parameter                       Value         Units
VCBO           Collector- Base Voltage                        15           V
VCEO           Collector-Emitter Voltage                      12           V
VEBO           Emitter-Base Voltage                            6           V
IC             Collector Current -Continuous                  0.5          A
PC             Collector Power Dissipation                    0.15         W
TJ             Junction Temperature                           150          
Tstg           Storage Temperature                         -55-150         


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                          Symbol                Test      conditions          MIN      TYP     MAX      UNIT

     Collector-base breakdown voltage             V(BR)CBO                 IC=10A, IE=0                15                        V

     Collector-emitter breakdown voltage          V(BR)CEO                 IC=1mA, IB=0                12                        V

     Emitter-base breakdown voltage               V(BR)EBO                 IE=10A, IC=0                 6                        V

     Collector cut-off current                      ICBO                  VCB= 15 V, IE=0                               0.1      A

     Emitter cut-off current                        IEBO                   VEB= 6V, IC=0                                0.1      A

     DC current gain                                 hFE                 VCE=2V, IC=10mA              270               680

     Collector-emitter saturation voltage          VCE(sat)         IC=200mA,IB=10mA                                    0.25     V

     Transition frequency                            fT             VCE=2V,IC=10mA, f=100MHz                    320             MHz

     Collector output capacitance                   Cob             VCB=10V,IE=0,f=1MHz                         7.5              pF
                              2SC5585
                          SOT-523 Transistor(NPN)


Typical Characteristics

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