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                                                                                                       2SD1760(NPN)
                                                                                                    TO-251/TO-252-2L Transistor
                                                                                                                 TO-251

                                                             1. BASE


                                                             2. COLLECTOR


                                                             3. EMITTER

                     1   2 3

Features
        Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A)
        Complements the 2SB1184.
MAXIMUM RATINGS (TA=25 unless otherwise noted)                                                                   TO-252-2L
 Symbol                    Parameter                           Value          Units
 VCBO          Collector-Base Voltage                            60               V
 VCEO          Collector-Emitter Voltage                         50               V
 VEBO          Emitter-Base Voltage                              5                V
 IC            Collector Current -Continuous                     3                A
 PC            Collector Power Dissipation                       1.5              W
 TJ            Junction Temperature                             150               
 Tstg          Storage Temperature                           -55 to +150          
                                                                                                   Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS (Tamb=25                                    unless         otherwise    specified)

             Parameter                           Symbol                    Test       conditions           MIN     TYP       MAX   UNIT

Collector-base breakdown voltage                 V(BR)CBO        IC=50A, IE=0                              60                        V

Collector-emitter breakdown voltage              V(BR)CEO        IC=1mA, IB=0                              50                        V

Emitter-base breakdown voltage                   V(BR)EBO        IE=50A, IC=0                               5                        V

Collector cut-off current                           ICBO         VCB=40V, IE=0                                                1     A

Emitter cut-off current                             IEBO         VEB=4V, IC=0                                                 1     A

DC current gain                                     hFE(1)       VCE=3V, IC=500mA                          82                390

Collector-emitter saturation voltage             VCE(sat)        IC=2A, IB=200mA                                              1      V

Transition frequency                                  fT         VCE=5V, IC=500mA,f=30MHz                           90             MHz

Collector output capacitance                         Cob         VCB=10V, IE=0, f=1MHz                              40              pF

CLASSIFICATION OF         hFE(1)
Rank                                         P                                           Q                               R

Range                                      82-180                                     120-270                         180-390

Marking
                           2SD1760(NPN)
                          TO-251/TO-252-2L Transistor

Typical Characteristics

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