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2sd1761


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                                                                                           2SD1761(NPN)
                                                                                         TO-220F Bipolar Transistors
                                                                                                   TO-220F

                                                  1. BASE

                                                  2. COLLECTOR

                                                  3. EMITTER
                                 1    2   3


Features
       Low collector saturation voltage:
       Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A
       Excellent current characteristics of DC current gain.
       Large collector power dissipation: PC=30W(TC=25)
       Complementary pair with 2SB1187
MAXIMUM RATINGS (TA=25 unless otherwise noted)                                         Dimensions in inches and (millimeters)

       Symbol                                     Parameter                                      Value                Units
VCBO                Collector-Base Voltage                                                        80                   V
VCEO                Collector-Emitter Voltage                                                     60                   V
VEBO                Emitter-Base Voltage                                                           5                   V
IC                  Collector Current -Continuous                                                  3                   A
pC                  Collector Power dissipation                                                    2                   W
TJ                  Junction Temperature                                                          150                  
Tstg                Storage Temperature                                                         -55-150                
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
             Parameter                            Symbol       Test   conditions                   MIN      TYP       MAX     UNIT

 Collector-base breakdown voltage                 V(BR)CBO   IC=50uA, IE=0                             80                       V

 Collector-emitter breakdown voltage              V(BR)CEO   IC=1mA,IB=0                               60                       V

 Emitter-base breakdown voltage                   V(BR)EBO   IE=50uA,IC=0                              5                        V

 Collector cut-off current                          ICBO     VCB=60V,IE=0                                             10      uA

 Emitter cut-off current                            IEBO     VEB=4V,IC=0                                              10      uA

 DC current gain                                   hFE(1)    VCE=5V,IC=0.5A                            60             320

 Collector-emitter saturation voltage             VCE(sat)   IC=2A,IB=0.2A                                             1        V

 Base-emitter saturation voltage                  VBE(sat)   IC=2A,IB=0.2A                                            1.5       V

 Transition frequency                                fT      VCE=5V,IC=0.5A                                  8                MHz

 Collector output capacitance                       Cob      VCB=10V,IE=0,f=1MHz                            90                  pF

 CLASSIFICATION OF           hFE(1)
 Rank                                         D                                    E                              F

 Range                                    60-120                              100-200                         160-320
                           2SD1761(NPN)
                          TO-220F Bipolar Transistors


Typical Characteristics



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